TC429EPA datasheet(2/7 Pages) TELCOM

2 / 7 page

4-176

TELCOM SEMICONDUCTOR, INC.

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +20V

Input Voltage, Any Terminal ..... VDD +0.3V to GND – 0.3V

Power Dissipation (TA ≤ 70°C)

Plastic DIP ...................................................... 730mW

CerDIP ............................................................ 800mW

Derating Factors

Plastic DIP ............................ 5.6 mW/

°C Above 36°C

CerDIP ...................................................... 6.4 mW/

°C

Operating Temperature Range

C Version ............................................... 0

°C to +70°C

I Version ........................................... – 25

°C to +85°C

E Version .......................................... – 40

°C to +85°C

M Version ....................................... – 55

°C to +125°C

ELECTRICAL CHARACTERISTICS:

TA = +25°C with 7V ≤ VDD ≤ 18V, unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

VIH

Logic 1, High Input Voltage

2.4

1.8

—

VIL

Logic 0, Low Input Voltage

—

1.3

0.8

IIN

Input Current

≤ V

– 10

—

µA

Output

VOH

High Output Voltage

VDD – 0.025

—

VOL

Low Output Voltage

—

0.025

Output Resistance

VIN = 0.8V,

—

1.8

2.5

Ω

IOUT = 10mA, VDD = 18V

VIN = 2.4V,

—

1.5

2.5

IOUT = 10mA, VDD = 18V

IPK

Peak Output Current

VDD = 18V (See Figure 3)

—

Switching Time (Note 1)

Rise Time

Figure 1, CL = 2500pF

—

nsec

Fall Time

Figure 1, CL = 2500pF

—

nsec

tD1

Delay Time

Figure 1

—

nsec

tD2

Delay Time

Figure 1

—

nsec

Power Supply

Power Supply Current

VIN = 3V

—

3.5

VIN = 0V

—

0.3

0.5

NOTES: 1. Switching times guaranteed by design.

Maximum Chip Temperature ................................. +150

°C

Storage Temperature Range ................ – 65

°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300

°C

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operational sections of the specifications is not implied.

Exposure to Absolute Maximum Rating Conditions for extended periods

may affect device reliability.

TC429

6A SINGLE HIGH-SPEED,

CMOS POWER MOSFET DRIVER

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