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2SC2776 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części 2SC2776
Szczegółowy opis  Silicon NPN Epitaxial
PDF  1 Pages
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Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC2776 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC2776 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
Silicon NPN Epitaxial
2SC2776
Features
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
4V
Collector current
IC
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE =0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC =1mA , RBE =
20
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC =0
4
V
Collector cutoff current
ICBO
VCB =10V, IC =0
0.5
ìA
DC current transfer ratio
hFE
VCE =6V, IC = 1 mA
35
200
Collector to emitter saturation voltage
VCE(sat) IC =10mA, IB =1mA
0.8
1.2
V
Collector output capacitance
Cob
VCB =10V, IE = 0,f= 1 MHz
1.1
pF
Gain bandwidth product
fT
VCE =6V, IC = 1 MA
320
MHz
Noise figure
NF
VCE =6V, IC =1mA,
f= 100 MHz,Rg = 50 Ù
5.5
dB
Power gain
PG
VCE =6V, IC = 1 mA,f= 100 MHz,Rg =
100Ù, RL =550Ù
17
dB
hFE Classification
Marking
VA
VB
VC
Rank
A
B
C
hFE
35
70
60
120
100
200


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