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2SC3361 Arkusz danych(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3361 Arkusz danych(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB = 40V , IE =0 0.1 ìA Emitter cutoff current IEBO VEB =4V , IC =0 0.1 ìA DC current Gain hFE VCE =6V , IC = 1mA 90 400 Gain bandwidth product fT VCE =6V , IC = 1mA 100 MHz Common base output capacitance Cob VCB = 6V , f = 1MHz 2.7 pF Collector-to-emitter saturation voltage VCE(sat) IC = 10mA , IB =1mA 0.1 0.4 V Base-to-emitter saturation voltage VBE(sat) IC = 10mA , IB =1mA 0.75 1.1 V Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE =0 60 V Collector-to-emitter breakdown voltage V(BR)CEO IC =1mA , RBE = 50 V Emitter-to-base breakdown voltage V(BR)EBO IE = 10ìA , IC =0 5 V Delay time td 40 ns Rise time tr 80 ns Storage time tstg 230 ns Fall time tf 160 ns 2SC3361 hFE Classification Marking S4 S5 S6 hFE 90 180 135 270 200 400 |
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