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FZT692B Arkusz danych(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części FZT692B
Szczegółowy opis  NPN Silcon Planar Medium Power High Gain Transistor
PDF  2 Pages
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Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

FZT692B Arkusz danych(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

  FZT692B Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd FZT692B Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd  
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2
SMD Type
Transistors
www.kexin.com.cn
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
BreakdownVoltages
V(BR)CBO IC=100ìA
70
V
BreakdownVoltages
V(BR)CEO IC=10mA *
70
V
BreakdownVoltages
V(BR)EBO IE=100ìA
5
V
Cut-Off Currents
ICBO
VCB=55V
0.1
ìA
Cut-Off Currents
IEBO
VEB=4V
0.1
ìA
Saturation Voltages*
VCE(sat)
IC=0.1A, IB=0.5mA
IC=1A, IB=10mA
IC=2A, IB=200mA
0.15
0.5
0.5
V
Saturation Voltages
VBE(sat) IC=1A, IB=10mA
0.9
V
Base-emitter ON voltage *
VBE(on)IC=1A, VCE=2V
0.9
V
Static Forward Current Transfer Ratio *
hFE
IC=100mA, VCE=2V
IC=500mA, VCE=2V
IC=1A, VCE=2V
500
400
150
Transitional frequency
fT
IC=50mA, VCE=5V f=50MHz
150
MHz
Input capacitance
Cibo
VEB=0.5V, f=1MHz
200
pF
Output capacitance
Cobo
VCB=10V, f=1MHz
12
pF
Turn-on time
t(on)
IC=500mA, VCC=10V
46
ns
Turn-off time
t(off)
IB1=IB2=50mA
1440
ns
* Pulse test: tp = 300 ìs; d
0.02.
FZT692B
Marking
Marking
FZT692B



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