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2SA2151 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA2151 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA2151 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -0.5 V ICBO Collector Cutoff Current VCB= -200V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -3A ; VCE= -4V 50 180 COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 450 pF fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 20 MHz hFE Classifications O P Y 50-100 70-140 90-180 isc Website:www.iscsemi.cn 2 |
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