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BFR520 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BFR520 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 7 page ![]() INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 70 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website:www.iscsemi.cn |
Podobny numer części - BFR520 |
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Podobny opis - BFR520 |
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