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BUY49P Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części BUY49P
Szczegółowy opis  isc Silicon NPN Power Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUY49P Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUY49P Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUY49P Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUY49P
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 20mA; IB= 0
200
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
250
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
0.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
1.1
V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
0.1
μA
hFE-1
DC Current Cain
IC= 20mA; VCE= 2V
30
hFE-2
DC Current Cain
IC= 20mA; VCE= 5V
40
hFE-3
DC Current Cain
IC= 0.5mA; VCE= 5V
40
fT
Current-Gain—Bandwidth Product
IC= 100mA; VCE= 10V
30
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
50
pF
Switching Times
ton
Turn-On Time
0.8
μs
toff
Turn-Off Time
IC= 0.5A; IB1= -IB2= 50mA;
VCC= 20V
2.5
μs
isc Website：www.iscsemi.cn
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