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BU505DF Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU505DF Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU505DF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=25mH 700 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.9 A 1.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.9 A 1.3 V ICES Collector cut-off current VCE =1500V;VBE=0; TC=125℃ 0.15 1.0 mA hFE-1 DC current gain IC=0.1A ;VCE=5V 6 30 hFE-2 DC current gain IC=2A ;VCE=5V 2.22 VF Diode forward voltage IF=2A 1.8 V fT Transition frequency IC=0.1A ;VCE=5V 7 MHz CC Collector output capacitance IE=0;f=1MHz;VCB=10V 65 pF |
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