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2SC1906 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC1906 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1906 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF amplifier,mixer and local oscillator. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 50 mA IE Emitter Current-Continuous -50 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
Podobny numer części - 2SC1906 |
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Podobny opis - 2SC1906 |
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