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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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2SC4570 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4570 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 9 page  INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4570 DESCRIPTION ·High Current-Gain—Bandwidth Product fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS ·Designed for use in UHF oscillator and mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 30 mA PC Collector Power Dissipation @TC=25℃ 0.12 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website：www.iscsemi.cn |
Podobny numer części - 2SC4570 |
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Podobny opis - 2SC4570 |
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