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BDT81F Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części BDT81F
Szczegółowy opis  isc Silicon NPN Power Transistors
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT81F Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BDT81F/83F/85F/87F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDT81F
60
BDT83F
80
BDT85F
100
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT87F
IC= 30mA; IB= 0
120
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
B
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 7A; IB= 0.7A
B
1.6
V
VBE(on)
Base-Emitter On Voltage
IC= 5A ; VCE= 4V
1.5
V
ICES
Collector Cutoff Current
VCE= 0.8VCBOmax; VBE= 0
1
mA
ICBO
Collector Cutoff Current
VCB= VCBOmax; IE= 0
0.2
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
0.1
mA
hFE-1
DC Current Gain
IC= 50mA ; VCE= 10V
40
hFE-2
DC Current Gain
IC= 5A ; VCE= 4V
40
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V
10
MHz
Switching Times
ton
Turn-On Time
1
μs
toff
Turn-Off Time
IC= 7A; IB1= -IB2= 0.7A
2
μs
isc Website：www.iscsemi.cn



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