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TCED1100 Arkusz danych(PDF) 5 Page - Vishay Siliconix |
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TCED1100 Arkusz danych(HTML) 5 Page - Vishay Siliconix |
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5 / 9 page ![]() TCED1100(G) up to TCED4100 Vishay Telefunken Rev. A3, 11–Jan–99 238 Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Rise time VCC = 2 V, IC = 10 mA, RL = 100 W (see figure 3) tr 300 ms Fall time CC C L (g ) tf 250 ms CI w Channel I Channel II 50 W + VCC Oscilloscope RI w 1 M W 20 pF IC= 10 mA ; Adjusted through input amplitude IF RG = 50 W t1 = 1 ms 0 14779 RL tp T + 0.01 IF Figure 3. Test circuit tp t t 0 0 10% 90% 100% tr td ton ts tf toff IF IC 96 11698 tp pulse dura- tion td delay time tr rise time ton (= td + tr) turn-on time ts storage time tf fall time toff (= ts + tf) turn-off time Figure 4. Switching times |
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