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BUT12 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUT12 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0, L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.5 V ICES Collector Cutoff Current VCE=RatedVCES ;VBE= 0 VCE=RatedVCES ;VBE= 0;TC=125℃ 1 3 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 mA hFE-1 DC Current Gain IC= 10mA; VCE= 5V 10 35 hFE-2 DC Current Gain IC= 1A; VCE= 5V 10 35 Switching Times ;Resistive Load ton Turn-on Time 1.0 μs ts Storage Time 4.0 μs tf Fall Time IC= 6A; IB1= -IB2=1.2A 0.8 μs isc Website:www.iscsemi.cn |
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