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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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2SA1358 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1358 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) ·Complement to Type 2SC3421 APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB B Base Current-Continuous -0.1 A Collector Power Dissipation @ TC=25℃ 10 PC Collector Power Dissipation @ Ta=25℃ 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn |
Podobny numer części - 2SA1358 |
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Podobny opis - 2SA1358 |
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