TSDF1220 datasheet(1/6 Pages) VISHAY

Numer części	TSDF1220

Szczegółowy opis	Silicon NPN Planar RF Transistor

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Producent	VISHAY [Vishay Siliconix]

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TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW

Vishay Telefunken

www.vishay.de

• FaxBack +1-408-970-5600

Rev. 6, 30-Jun-00

1 (6)

Document Number 85066

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For low noise applications such as preamplifiers, mix-

ers and oscillators in analog and digital TV–systems

(e.g., satellite tuners) up to microwave frequencies.

Features

D Low power applications

D Very low noise figure

D High transition frequency fT = 12 GHz

13 579

21

4

3

94 9279

TSDF1220 Marking: F20

Plastic case (SOT 143)

1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

95 10831

2

1

43

94 9278

TSDF1220R Marking: 20F

Plastic case (SOT 143R)

1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

2

1

3

13 653

4

13 566

TSDF1220W Marking: WF2

Plastic case (SOT 343)

1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

2

1

3

4

13 566

13 654

TSDF1220RW Marking: W2F

Plastic case (SOT 343R)

1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Collector-base voltage

VCBO

9

V

Collector-emitter voltage

VCEO

6

V

Emitter-base voltage

VEBO

2

V

Collector current

IC

40

mA

Total power dissipation

Tamb ≤ 60 °C

Ptot

200

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

–65 to +150

°C

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