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2SC2761 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2761 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2761 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1m A ; IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=1m A ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=20A; IB=4A 1.5 V VBE(sat) Base-emitter saturation voltage IC=20A; IB=4A 1.7 V ICBO Collector cut-off current VCB=450V IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=15A ; VCE=2V 8 |
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