2SB550 datasheet(1/3 Pages) ISC

Numer części	2SB550

Szczegółowy opis	Silicon PNP Power Transistors

PDF	3 Pages

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB550

DESCRIPTION

·With TO-66 package

·Low collector saturation voltage

APPLICATIONS

·For low frequency power amplification

·For low speed and power switching

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-100

V

VCEO

Collector-emitter voltage

Open base

-70

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-5

A

PC

Collector power dissipation

TC=25℃

25

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-66) and symbol

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