2SC1815

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in driver stage of AF amplifier

general purpose amplification.

Pinning

1 = Emitter

2 = Collector

3 = Base

TO-92

Dimensions in inches and (millimeters)

.022(0.56)

.014(0.36)

.050

(1.27)

.148(3.76)

.132(3.36)

Typ

.190(4.83)

.170(4.33)

.100

(2.54)

Typ

.050

(1.27)

Typ

.022(0.56)

.014(0.36)

.190(4.83)

.170(4.33)

.500

(12.70)

Min

3 2 1

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current

150

mA

Base Current

50

mA

Total Power Dissipation

400

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Rank

O

Y

GR

BL

Range

70~140

120~240

200~400

350~700

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

60

-

-

V

Collector-Emitter Breakdown Voltage

50

-

-

V

Emitter-Base Breakdown Volatge

5

-

-

V

Collector Cutoff Current

-

-

100

nA

Emitter Cutoff Current

-

-

100

nA

-

-

0.25

V

-

-

1

V

70

-

700

-

25

-

-

-

Transition Frequency

80

-

-

MHz

Output Capacitance

-

-

3.5

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%