IRF830 datasheet(2/2 Pages) DCCOM

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Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain-Source Breakdown Voltage

V(BR)DSS

500

VGS=0V, ID=250

µA

Drain-Source Leakage Current

IDSS

0.25

VDS=500V, VGS=0V

1.0

VDS=400V, VGS=0V, TJ=125oC

Gate-Source Forward Leakage Current

IGSSF

100

VGSF=20V, VDS=0V

Gate-Source Reverse Leakage Current

IGSSR

-100

VGSR=-20V, VDS=0V

Gate Threshold Voltage

VGS(th)

2.0

4.0

VDS=VGS, ID=250

µA

Static Drain-Source On-Resistance

RDS(on)

1.3

1.5

Ω

VGS=10V, ID=2.0A(Note)

Forward Transconductance

gFS

1.5

VDS= 15V, ID=2.0A(Note)

Input Capacitance

Ciss

775

Output Capacitance

Coss

VDS=25V, VGS=0V, f=1.0MHz

Reverse Transfer Capacitance

Crss

Turn-On Delay Time

td(on)

Rise Time

VDD=250V, ID=4.0A,

Turn-Off Delay Time

td(off)

VGS=10V, RG=12

Ω, RL=62Ω(Note)

Fall Time

Total Gate Charge

Gate-Source Charge

Qgs

3.5

VDS=400V, ID=4.0A, VGS=10V(Note)

Gate-Drain Charge

Qgd

Internal Drain Inductance

4.5

Measured from the drain lead 0.25"

from package to center of die

Internal Source Inductance

7.5

Measured from the source lead 0.25"

from package to source bond pad

Diode Forward Voltage

VSD

1.4

IS=4.0A, VGS=0V(Note)

Reverse Recovery Time

trr

760

IF=4.0A, di/dt=100A/

µs(Note)

Forward Turn-On Time

ton

Intrinsic turn-on time is neglegible and dominated by inductance LS+LD

Thermal Resistance

Junction to Case

θJC

1.67

C/W -

Junction to Ambient

θJA

62.5

Electrical Characteristics (TJ = 25oC unless otherwise specified)

Note: Pulse Test: Pulse Width

300

µs, Duty Cycle

DC COMPONENTS CO., LTD.

IRF830

N-Channel Power MOSFET

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