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BAV300 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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BAV300 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
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3 / 6 page ![]() BAV300 / 301 / 302 / 303 Document Number 85545 Rev. 1.9, 07-Mar-06 Vishay Semiconductors www.vishay.com 3 Typical Characteristics Tamb = 25 °C, unless otherwise specified Figure 1. Reverse Current vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage Figure 3. Differential Forward Resistance vs. Forward Current 040 80 120 160 0.01 0.1 1 10 1000 Tj -Junction Temperature (°C) 200 94 9084 100 Scattering Limit V R = VRRM 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9085 Scattering Limit T j = 25 °C 0.1 1 10 1 10 100 1000 I F - Forward Current (mA) 100 94 9089 T j = 25 °C Figure 4. Board for RthJA definition (in mm) 25 2.5 10 0.71 1.3 1.27 9.9 24 0.152 0.355 95 10329 |
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