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2SC4618 Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC4618 Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente 2SC4618 NPN General Purpose Transistor 01-December-2008 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low collector capacitance Low rbb, high gain, and excellent noise characteristics ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 50 mA Collector Power Dissipation Pc 0.15 W Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage IC = 50 µA, IE = 0 V(BR)CBO 40 - - V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 V(BR)CEO 25 - - V Emitter-Base Breakdown Voltage IE = 50 µA, IC = 0 V(BR)EBO 5 - - V Collector Cut-Off Current VCB = 24 V, IE = 0 ICBO - - 0.5 μA Emitter Cut-Off Current VEB = 3 V, IC = 0 IEBO - 0.5 μA Collector-Emitter Saturation Voltage IC = 10mA, IB = 1 mA VCE(sat) - - 0.3 V DC Current Transfer Ratio VCE = 6V, IC = 1 mA hFE 56 - 270 Transition Frequency VCE = 6V, IE = 1 mA, f = 100 MHz fT 150 - - MHz Output Capacitance VCE = 6V, IE = 0 A, f = MHz COB - - 2.2 pF CLASSIFICATION OF hFE Rank N P Q Range 56 – 120 82 – 180 120 – 270 Marking AN AP AQ SOT-523 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.50 1.70 G 0.00 0.15 B 1.45 1.75 H 0.28 0.40 C 0.75 0.85 J 0.10 0.20 D 0.70 0.90 K - - E 0.90 1.10 L 0.75 0.85 F 0.25 0.33 |
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