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BAV23 Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Numer części BAV23
Szczegółowy opis  Plastic Encapsulated Schottky Diode
PDF  2 Pages
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Producent  SECOS [SeCoS Halbleitertechnologie GmbH]
Strona internetowa  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BAV23 Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
BAV23 Series
BAV23A / BAV23C / BAV23S
Plastic Encapsulated Schottky Diode
01-June-2007 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
BAV23A, Marking: KT7
BAV23C, Marking: KT6
BAV23S, Marking: KL31
ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Peak Repetitive Peak Reverse Voltage
VRRM
250
V
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
200
V
Forward Continuous Current
IFM
400
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0 µs
@ t = 100 µs
@ t = 10 ms
IFSM
9.0
3.0
1.7
A
Power Dissipation
PD
350
mW
Thermal Resistance Junction to Ambient Air
RθJA
357
°C / W
Operating Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)
250
-
V
IR= 100 μA
Reverse Voltage Leakage Current
IR
-
0.1
μA
VR = 250 V
Forward Voltage
VF
-
1
1.25
V
IF = 100 mA
IF = 200 mA
Total Capacitance
CT
-
5
pF
VR = 0, f = MHz
Reverse Recovery Time
tRR
-
50
nS
IF = IR = 30 mA,
Irr = 0.1 x IR, RL = 100 Ω
SOT-23
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.80
3.04
G
0.09
0.18
B
2.10
2.55
H
0.45
0.60
C
1.20
1.40
J
0.08
0.177
D
0.89
1.15
K
0.6 REF.
E
1.80
2.00
L
0.89
1.02
F
0.30
0.50


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