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SCS481J Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SCS481J Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Any changing of specification will not be informed individual SCS481J Plastic-Encapsulate Diodes 0.2 AMP Schottky Barrier Rectifiers nt rectification http://www.SeCoSGmbH.com Elektronische Bauelemente 01-J an-2008 Rev. B Page 1 of 2 SOT-343 FEATURES *Low curre *High reliability MARKING: 3U Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 C Parameter Symbol Limits Unit o Peak reverse voltage VRM 30 V DC reverse VR 30 V Peak forward surge current IFSM 1 A Mean rectifying current IO 0.2 A Junction temperature Tj 125 ℃ Storage temperature Tstg -40~+125 ℃ 60 Hz for 1 cycle Electrical Ratings @TA=25 ℃ Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.28 0.33 0.43 0.5 V IF=1mA IF=10mA IF=100mA IF=200mA Reverse current IR 30 μA VR=10V Unit:mm 1 4 2 3 2.10 1.30 0.25 0.65 (TYP.) 1 2 4 3 0.1 0.1 0.1 1.0 0.95 0 .1 0 .1 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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