01-Jun-2002 Rev. A

Page

5 of 9

N-Channel

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Any changing of specification will not be informed individual

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

Fig 11. Forward Characteristics of

Reverse Diode

Fig 12. Gate Threshold Voltage v.s.

Junction Temperature

Elektronische Bauelemente

SSG

4501

N Channel

Enhancement Mode Power Mos.FET

0m

Ω

Ω