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SSG4505 Arkusz danych(PDF) 7 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4505 Arkusz danych(HTML) 7 Page - SeCoS Halbleitertechnologie GmbH |
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7 / 7 page ![]() 01-Jan-2008 Rev. B Page 7 of 7 h tp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Elektronische Bauelemente SSG 4505 N Channel 10A, 30V,RDS(ON) 14m Enhancement Mode Power Mos.FET P Channel -8.4A, - 30V,RDS(ON) 20m Ω Ω |
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