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SSG4565 Arkusz danych(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4565 Arkusz danych(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH |
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4 / 7 page ![]() Elektronische Bauelemente SSG4565 Enhancement Mode Power Mos.FET Ω 01-Jun-2002 Rev. A Page 4 of 7 P Channel 6.5A, 40V,RDS(ON) 33m N Channel 7.6A, 40V,RDS(ON) 25mΩ Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual |
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