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STT8205S Arkusz danych(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH |
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STT8205S Arkusz danych(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH |
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4 / 4 page ![]() Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 180 /W Elektronische Bauelemente STT8205S 6 A, 20V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 o f 4 |
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