Dated : 12/01/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
LS4448
SILICON EPITAXIAL PLANAR DIODE
fast switching diode in QuadroMELF case especially
suited for automatic surface mounting.
Identical electrically to standard JEDEC 1N4448.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
75
V
Rectified Current (Average)
Half Wave Rectification with Resist. Load (f ≥ 50 Hz)
IO
150
1)
mA
Surge Forward Current at t < 1 s and Tj = 25 OC
IFSM
500
mA
Power Dissipation
Ptot
500
1)
mW
Junction Temperature
Tj
175
O
C
Storage Temperature Range
TS
- 65 to + 175
O
C
1) Valid provided that electrodes are kept at ambient temperature.
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 5 mA
at IF = 100 mA
VF
0.62
-
0.72
1
V
Leakage Current
at VR = 20 V
at VR = 75 V
IR
-
-
25
5
nA
µA
Reverse Breakdown Voltage
tested with 100 µA Pulses
V(BR)R
100
-
V
Capacitance
at VF = VR = 0
Ctot
-
4
pF
Reverse Recovery Time
from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
trr
-
4
ns
Thermal Resistance Junction to Ambient Air
RthA
-
0.35
1)
K/mW
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
ηv
0.45
-
-
1) Valid provided that electrodes are kept at ambient temperature.
LS-34
QuadroMELF
Dimensions in mm
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