EPA120D

UPDATED 01/13/2006

High Efficiency Heterojunction Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 2 of 2

Revised January 2006

S-PARAMETERS

8V, 1/2 Idss

FREQ

--- S11 ---

--- S21 ---

--- S12 ---

--- S22 ---

(GHz)

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

1

0.891

-106.9 15.439

119.2

0.029

40.8

0.290

-64.3

2

0.858

-143.2

9.009

97.3

0.034

27.9

0.219

-86.7

3

0.854

-159.9

6.233

84.9

0.036

26.8

0.207

-97.0

4

0.850

-170.6

4.775

75.1

0.037

25.2

0.212

-103.1

5

0.856

-178.8

3.800

66.3

0.039

29.6

0.228

-112.6

6

0.856

174.1

3.195

58.6

0.041

31.4

0.245

-117.0

7

0.858

168.5

2.766

51.0

0.044

34.1

0.258

-121.6

8

0.863

162.7

2.424

43.9

0.046

35.9

0.279

-127.2

9

0.870

157.6

2.140

36.7

0.048

36.0

0.298

-133.0

10

0.872

153.1

1.926

30.2

0.054

37.5

0.324

-139.4

11

0.880

148.6

1.738

23.4

0.056

38.3

0.352

-146.3

12

0.889

145.4

1.565

17.0

0.059

40.9

0.383

-152.7

13

0.890

142.4

1.412

10.7

0.065

37.4

0.413

-160.3

14

0.898

140.3

1.289

5.2

0.070

36.2

0.459

-165.7

15

0.910

138.5

1.176

0.0

0.075

38.6

0.487

-170.9

16

0.905

136.4

1.080

-5.4

0.080

36.8

0.529

-175.5

17

0.909

135.0

0.991

-9.9

0.083

36.9

0.557

-179.2

18

0.903

133.4

0.922

-14.9

0.092

35.4

0.581

177.8

19

0.901

130.8

0.874

-19.6

0.100

33.4

0.607

173.1

20

0.909

127.3

0.821

-24.3

0.109

32.7

0.614

168.7

Note:

The data included 0.7 mils diameter Au bonding wires:

1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.