EPA680A datasheet(1/3 Pages) EXCELICS

Numer części	EPA680A

Szczegółowy opis	High Efficiency Heterojunction Power FET

PDF	3 Pages

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Producent	EXCELICS [Excelics Semiconductor, Inc.]

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EPA680A/EPA680AV

UPDATED 05/02/2006

High Efficiency Heterojunction Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 3

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

Revised May 2006

Chip Thickness: 45

± 15 microns

: Via Hole

No Via Hole For EPA680A

All Dimensions In Microns

FEATURES

•

+36.5dBm TYPICAL OUTPUT POWER

•

6.5dB TYPICAL POWER GAIN FOR EPA680A

AND 8.0dB FOR EPA680AV AT 12GHz

•

0.4 X 6800 MICRON RECESSED “MUSHROOM” GATE

•

Si3N4 PASSIVATION AND PLATED HEAT SINK

•

ADVANCED EPITAXIAL DOPING PROFILE PROVIDES

HIGH POWER EFFICIENCY AND RELIABILITY

•

Idss SORTED IN 160mA PER BIN RANGE

ELECTRICAL CHARACTERISTICS (Ta = 25

OC)

Caution! ESD sensitive device.

EPA680A

EPA680AV

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

P1dB

Output Power at 1dB Compression

f=12GHz

Vds=8V, Ids=50% Idss

35.5

36.5

35.5

36.5

dBm

G1dB

Gain at 1dB Compression

f=12GHz

Vds=8V, Ids=50% Idss

5.5

6.5

7

8

dB

PAE

Power Added Efficiency at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

33

36

%

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

1250

2050

2690

1250

2050

2690

mA

Gm

Transconductance

Vds=3V, Vgs=0V

1360

2150

1360

2150

mS

Vp

Pinch-off Voltage

Vds=3V,Ids=20mA

-1.0

-2.5

-1.0

-2.5

V

BVgd

Drain Breakdown Voltage

Igd=6.8mA

-13

-15

-13

-15

V

BVgs

Source Breakdown Voltage

Igs=6.8mA

-7

-14

-7

-14

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

6

5.5

oC/W

MAXIMUM RATINGS AT 25

OC

EPA680A

EPA680AV

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

8V

12V

8V

Vgs

Gate-Source Voltage

-5V

-3V

-5V

-3V

Igsf

Forward Gate Current

30.6 mA

10.2 mA

30.6 mA

10.2 mA

Igsr

Reserve Gate Current

-5.1 mA

-1.7 mA

-5.1 mA

-1.7 mA

Input Power

33.5 dBm

@ 3dB Compression

33.5 dBm

@ 3dB Compression

Tch

Channel Temperature

175

oC

175

oC

175

oC

175

oC

Tstg

Storage Temperature

-65/175

oC

-65/175

oC

-65/175

oC

-65/175

oC

Pt

Total Power Dissipation

23 W

25 W

Note:

1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

D

DD

D

G

60

231

1320

40

135

201

50

100

48

440

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