APT5F100K datasheet(2/4 Pages) MICROSEMI

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Static Characteristics

TJ = 25°C unless otherwise speciﬁed

Dynamic Characteristics

TJ = 25°C unless otherwise speciﬁed

Source-Drain Diode Characteristics

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

J = 25°C, L = 69mH, RG = 25Ω, IAS = 3A.

3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.

4 C

o(cr) is deﬁned as a ﬁxed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.

5 C

o(er) is deﬁned as a ﬁxed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of

DS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11.

6 R

G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

Unit

V/°C

mV/°C

μA

Unit

μC

V/ns

Min

Typ

Max

1000

1.15

2.4

2.8

2.5

-10

250

1000

±100

Min

Typ

Max

5.4

1.3

130

155

199

247

0.4

0.8

Min

Typ

Max

5.6

1409

118

7.6

Test Conditions

GS = 0V, ID = 250μA

Reference to 25°C, I

D = 250μA

GS = 10V, ID = 3A

GS = VDS, ID = 0.5mA

DS = 500V

J = 25°C

GS = 0V

J = 125°C

GS = ±30V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

SD = 3A, TJ = 25°C, VGS = 0V

J = 25°C

J = 125°C

SD = 3A

J = 25°C

SD/dt = 100A/μs

J = 125°C

DD = 100V

J = 25°C

J = 125°C

SD ≤ 3A, di/dt ≤1000A/μs, VDD = 400V,

J = 125°C

Test Conditions

DS = 50V, ID = 3A

GS = 0V, VDS = 25V

f = 1MHz

GS = 0V, VDS = 0V to 500V

GS = 0 to 10V, ID = 6A,

DS = 500V

Resistive Switching

DD = 666V, ID = 3

G = 2.2Ω

, V

GG = 15V

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefﬁcient

Drain-Source On Resistance 3

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefﬁcient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 1

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Symbol

BR(DSS)

∆V

BR(DSS)/∆TJ

DS(on)

GS(th)

∆V

GS(th)/∆TJ

DSS

GSS

Symbol

rrm

dv/dt

Symbol

iss

rss

oss

o(cr)

o(er)

d(on)

d(off)

APT5F100K

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