BD157 datasheet(1/2 Pages) ISC

Numer części	BD157

Szczegółowy opis	Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

Logo

1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD157

DESCRIPTION

·Collector–Emitter Sustaining Voltage-

: VCEO(SUS) = 250V(Min)

·DC Current Gain-

: hFE = 30~240(Min) @ IC= 50mA

APPLICATIONS

·Designed for power output stages for television, radio,

phonograph and other consumer product applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

275

V

VCEO

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

0.5

A

ICM

Collector Current-Peak

1.0

A

IB

B

Base Current-Continuous

0.25

A

PC

Collector Power Dissipation

TC=25℃

20

W

Ti

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

6.25

℃/W

isc Website：www.iscsemi.cn

www.iscsemi.cn

Podobny numer części - BD157

Producent	Numer części	Arkusz danych	Szczegółowy opis
Motorola, Inc	BD157	100Kb / 4P	Plastic Medium Power NPN Silicon Transistor
Fairchild Semiconductor	BD157	38Kb / 4P	Low Power Fast Switching Output Stages
Continental Device Indi...	BD157	90Kb / 2P	PLASTIC MEDIUM POWER SILICON TRANSISTORS
Rohm	BD1571KN-E2	236Kb / 9P	Image Correction IC for Camera

More results

Podobny opis - BD157

Producent	Numer części	Arkusz danych	Szczegółowy opis
Advanced Semiconductor	MRF342	145Kb / 1P	SILICON POWER NPN TRANSISTOR
NEC	2SC2333	167Kb / 3P	NPN Silicon Power Transistor
Continental Device Indi...	C13003	160Kb / 4P	NPN SILICON POWER TRANSISTOR
Continental Device Indi...	CFC4662	106Kb / 3P	NPN SILICON POWER TRANSISTOR
Bourns Electronic Solut...	BUT11	128Kb / 5P	NPN SILICON POWER TRANSISTOR
Bourns Electronic Solut...	BUX84	125Kb / 6P	NPN SILICON POWER TRANSISTOR
Microsemi Corporation	2N2880	45Kb / 2P	NPN POWER SILICON TRANSISTOR
Microsemi Corporation	2N5002	58Kb / 2P	NPN POWER SILICON TRANSISTOR
M/A-COM Technology Solu...	MRF10031	195Kb / 5P	Microwave Power Silicon NPN Transistor Microwave Power Silicon NPN Transistor
Kwang Myoung I.S. CO.,L...	TIP35CF	5Mb / 2P	Silicon NPN Power Transistor

More results

BD157 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

BD157 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

Podobny numer części - BD157

Podobny opis - BD157

Html Pages

1 2

Arkusz danych Pobierz

Link URL