For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 2 - 12 GHz

v01.0709

General Description

Features

Functional Diagram

Noise Figure: 1.8 dB

Gain: 15 dB

Output IP3: +25 dBm

P1dB Output Power: +13 dBm

50 Ohm Matched Input/Output

Supply Voltage: +4V @ 45 mA

24 Lead Ceramic 4x4mm SMT Package: 16mm2

Electrical Specifications

Typical Applications

This HMC772LC4 is ideal for:

• Wideband Communication Systems

• Surveillance Systems

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Military & Space

• Test Instrumentation

The HMC772LC4 is a GaAs MMIC HEMT Low Noise

Wideband Amplifier which operates between 2 and

12 GHz. The amplifier provides 15 dB of gain, 1.8 dB

noise figure up to 12 GHz and output IP3 of +25 dBm,

while requiring only 45 mA from a +4V supply voltage.

The Psat output power of up to +15 dBm enables the

LNA to function as a LO driver for many of HIttite’s

balanced, I/Q or image reject mixers. The HMC772LC4

also features I/Os that are DC blocked and internally

matched to 50 Ohms, making it ideal for SMT based

high capacity microwave radio applications. The

HMC772LC4 is housed in a RoHS compliant 4x4 mm

QFN leadless ceramic package.

HMC772LC4

Parameter

Min.

Typ.

Max.

Units

Frequency Range

2 - 12

GHz

Gain

14

15

dB

Gain Variation over Temperature

0.01

dB / °C

Noise Figure

1.8

2.5

dB

Input Return Loss

15

dB

Output Return Loss

15

dB

Output Power for 1 dB Compression

13

dBm

Output Third Order Intercept (IP3)

25

dBm

Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.)*

45

mA

* Adjust Vgg between -1 to 0.3V to achieve Idd = 45mA typical.