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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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MCP6021 Arkusz danych(PDF) 5 Page - Microchip Technology |
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MCP6021 Arkusz danych(HTML) 5 Page - Microchip Technology |
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5 / 42 page  © 2009 Microchip Technology Inc. DS21685D-page 5 MCP6021/1R/2/3/4 TEMPERATURE CHARACTERISTICS FIGURE 1-1: Timing diagram for the CS pin on the MCP6023. 1.1 Test Circuits The test circuits used for the DC and AC tests are shown in Figure 1-2 and Figure 1-3. The bypass capacitors are laid out according to the rules discussed in Section 4.7 “Supply Bypass”. FIGURE 1-2: AC and DC Test Circuit for Most Non-Inverting Gain Conditions. FIGURE 1-3: AC and DC Test Circuit for Most Inverting Gain Conditions. Electrical Specifications: Unless otherwise indicated, VDD = +2.5V to +5.5V and VSS = GND. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Industrial Temperature Range TA -40 — +85 °C Extended Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C Note 1 Storage Temperature Range TA -65 — +150 °C Thermal Package Resistances Thermal Resistance, 5L-SOT-23 θ JA — 256 — °C/W Thermal Resistance, 8L-PDIP θ JA —85 — °C/W Thermal Resistance, 8L-SOIC θ JA — 163 — °C/W Thermal Resistance, 8L-MSOP θ JA — 206 — °C/W Thermal Resistance, 8L-TSSOP θ JA — 124 — °C/W Thermal Resistance, 14L-PDIP θ JA —70 — °C/W Thermal Resistance, 14L-SOIC θ JA — 120 — °C/W Thermal Resistance, 14L-TSSOP θ JA — 100 — °C/W Note 1: The industrial temperature devices operate over this extended temperature range, but with reduced performance. In any case, the internal junction temperature (TJ) must not exceed the absolute maximum specification of 150°C. High-Z tON CS tOFF VOUT -50 nA High-Z ISS ICS 10 nA 10 nA 10 nA -50 nA -1 mA Amplifier On (typical) (typical) (typical) (typical) (typical) (typical) VDD MCP6021 2k Ω 2k Ω 1k Ω VOUT VIN VDD/2 1µF CL RL VL 0.1 µF CB1 RN RG RF 60 pF 10 k Ω CB2 VDD MCP6021 2k Ω 1k Ω VOUT VDD/2 VIN 1µF VL 0.1 µF 2k Ω CL RL CB1 RN RG RF 60 pF 10 k Ω CB2 |
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