BD201 datasheet(2/3 Pages) COMSET

2 / 3 page

PNP BD202 – BD204

NPN BD201 – BD203

COMSET SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

BD202

-ICEO

Collector Cutoff Current

-VCE=30 V, IB=0V

BD204

0.2

BD202

-ICBO

Collector Cutoff Current

-VCB=40 V, IE=0V, Tj=150°C

BD204

BD202

-IEBO

Emitter Cutoff Current

-VBE=5.0 V, IC=0

BD204

0.5

BD202

-VCEO

Collector Emitter Breakdown

Voltage

IC=0.2 A, IB=0V

BD204

BD202

-VBE

Base Emitter Voltage (1)

-IC=3 A, -VCE=2.0 V

BD204

1.5

BD202

-VCEK

Knee Voltage (1)

-IC=3 A, -IB= value for which

-IC=3.3 A at -VCE=2.0 V

BD204

-IC=3 A, -VCE=2.0 V

BD202

hFE

DC Current Gain (1)

-IC=2 A, -VCE=20 V

BD204

BD202

-IC=3 A, -IB=0.3 A

BD204

BD202

-VCE(SAT)

Collector-Emitter saturation

Voltage (1)

-IC=6 A, -IB=0.6 A

BD204

1.5

BD202

-VBE(SAT)

Base-Emitter saturation

Voltage (1)

-IC=6 A, -IB=0.6 A

BD204

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

BD201

fhfe

Cut-off frequency

-IC=0.3 A, -VCE=3.0 V

BD203

KHz

BD201

Transition frequency

-IC=0.3 A, -VCE=3.0 V

f= 1MHz

BD203

MHz

BD201

Is/b

Forward bias second

breakdown collector current

VCE=40 V,tp= 0.1 s

Tamb= 25 °C

BD203

1.5

BD201

hFE1/hFE2

DC current gain ration of

matched complementary pairs

-IC=1 A, -VCE=2.0 V

BD203

2.5

BD201

ton

Turn-on time

BD203

BD201

toff

Turn-off time

−I

Con=2 A

−I

Bon =IBoff =0.2 A

BD203

µs

(1) Pulse conditions : tp < 300

µs, δ =2%

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