BU911 datasheet(1/2 Pages) COMSET

Numer części	BU911

Szczegółowy opis	HIGH VOLTAGE POWER DARLINGTON

PDF	2 Pages

Scroll/Zoom	100%

Producent	COMSET [Comset Semiconductor]

Strona internetowa	http://comset.halfin.com

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COMSET SEMICONDUCTORS

1/2

NPN BU911

The BU911 are high voltage, silicon NPN transistors in monolithic Darlington mounted in Jedec TO-220

plastic package.

They are designed for applications such as electronic ignition, DC and AD motor controls, solenoid

drivers, etc.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCEO

Collector-Emitter Voltage

400

V

VCES

Collector-Emitter Voltage (VBE=0)

450

V

VEBO

Emitter-Base Voltage

5V

IC

6A

IC

Collector Current

ICM

10

A

IB

Base Current

1A

PD

Total Device Dissipation

@ TC = 25°

60

Watts

TJ

Junction Temperature

150

°C

TStg

Storage Temperature range

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-c

Thermal Resistance, Junction to case

70

K/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

ICEO

Collector Cutoff Current

VCE=400 V, IB=0V

--

1

mA

VCE=450 V, VBE=0

--

1

ICES

Collector Cutoff Current

VCE=450 V, VBE=0, TC=125°C

--

5

mA

IEBO

Emitter Cutoff Current

VBE=5.0 V, IC=0

--

5

mA

VCEO(sus)

Collector- Emitter sustaining

Voltage (1)

IC=100 mA

400

-

V

H

HIIG

GH

H V

VO

OL

LT

TA

AG

GE

E P

PO

OW

WE

ER

R D

DA

AR

RL

LIIN

NG

GT

TO

ON

N

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