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CSMASS1XAS Arkusz danych(PDF) 1 Page - Cystech Electonics Corp. |
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CSMASS1XAS Arkusz danych(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 3 page ![]() CYStech Electronics Corp. Spec. No. : C338AS Issued Date : 2004.03.10 Revised Date : Page No. : 1/1 CSMASS1XAS CYStek Product Specification 1.0Amp. Surface Mount Schottky Barrier Diodes CSMASS1XAS Series Features • Low forward voltage drop • High current capability • High reliability • High surge current capability • Glass passivated structure Mechanical Data • Case: Molded plastic SMA. • Solderability : MIL-STD-202 method 208 guaranteed • Epoxy: UL94V-0 rate flame retardant • Polarity: Color band denotes cathode end. • Mounting position: Any. • Weight: 0.064 gram Maximum Ratings and Electrical Characteristics ( Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. ) Type Parameter Symbol CSMA SS12 CSMA SS13 CSMA SS14 CSMA SS15 CSMA SS16 CSMA SS18 CSMA SS1B Units Repetitive peak reverse voltage VRRM 20 30 40 50 60 80 100 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 V Maximum DC blocking voltage VR 20 30 40 50 60 80 100 V Maximum instantaneous forward voltage @ IF=1A (Note 1) VF 0.55 0.75 0.82 V Maximum average forward rectified current @ TL=100℃ IO 1 A Peak forward surge current @8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 30 A Maximum DC reverse current at rated DC blocking TJ=25℃ Voltage TJ=100℃ IR 0.5 10 mA Typical thermal resistance, Junction to lead Rth, JL 20 ℃ /W Typical diode junction capacitance @ f=1MHz and applied 4V reverse voltage CJ 110 pF Storage temperature Tstg -55 ~ +150 ℃ Operating temperature TJ -55 ~ +125 ℃ |
Podobny numer części - CSMASS1XAS |
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Podobny opis - CSMASS1XAS |
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