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BAT43 Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Numer części BAT43
Szczegółowy opis  200 mW Hermetically Sealed Glass Fast Switching Schottky Barrier Diode
PDF  2 Pages
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

BAT43 Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  BAT43 Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd BAT43 Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
BAT42 / BAT43
200 mW Hermetically Sealed Glass Fast
Switching Schottky Barrier Diode
DO-35
Features
Low forward voltage drop
DO-35 package (JEDEC)
Through-hole device type mounting
Hermetically sealed glass
Compression bonded construction
All external surface are corrosion resistant and
leads are readily solderable
RoHS compliant
Solder hot dip Tin(Sn) lead finish
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
oCambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
BAT42/BAT43
Units
Power Dissipation
Pd
200
mW
Repetitive Peak Reverse Voltage
VRRM
30
V
Maximum DC Blocking Voltage
VR
30
V
Average Forward Rectified Current
IF(AV)
200
mA
Peak Forward Surge Current
IFSM
4.0
A
Operating and Storage Temperature Range
TJ, TSTG
-65 to + 125
oC
Electrical Characteristics
Type Number
Symbol
Min
Max
Units
Breakdown Voltage
@ IR=100uA
BV
30
V
Forward Voltage Drop All Types
BAT42
IF=200mA
BAT42
IF=10mA
BAT42
IF= 50mA
BAT43
IF=200mA
BAT43
IF =2.0mA
BAT43
IF=15mA
VF
0.26
1.0
0.40
0.65
1.0
0.33
0.45
V
Maximum Peak Reverse Current
VR=25V
IR
500
nA
Junction Capacitance
VR=1V, f=1.0MHz
Cj
7(Typ.)
pF
Reverse Recovery Time (Note 1)
trr
5.0 (Typ.)
nS
Note: 1. Reverse Recovery Test Conditions: IF=IR=10mA, IRR=1mA, RL=100Ω.
Version: A07


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