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APTM50AM38STG Arkusz danych(PDF) 5 Page - Microsemi Corporation

Numer części APTM50AM38STG
Szczegółowy opis  Phase leg Series & parallel diodes MOSFET Power Module
PDF  7 Pages
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Producent  MICROSEMI [Microsemi Corporation]
Strona internetowa  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50AM38STG Arkusz danych(HTML) 5 Page - Microsemi Corporation

  APTM50AM38STG Datasheet HTML 1Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 2Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 3Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 4Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 5Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 6Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 7Page - Microsemi Corporation  
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APTM50AM38STG
www.microsemi.com
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
50
100
150
200
250
300
350
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
VGS=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
012
3456
78
VGS, Gate to Source Voltage (V)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0
50
100
150
200
ID, Drain Current (A)
Normalized to
VGS=10V @ 45A
0
20
40
60
80
100
25
50
75
100
125
150
TC, Case Temperature (°C)
DC Drain Current vs Case Temperature



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