DRF1202

MOSFET Absolute Maximum Ratings

Symbol

Parameter

Min

Typ

Max

Unit

BV

DSS

Drain Source Voltage

500

V

I

D

Continuous Drain Current T

50

A

R

DS(on)

Drain-Source On State Resistance

0.25

Ω

Dynamic Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

C

iss

Input Capacitance

2000

pF

C

oss

Output Capacitance

165

C

rss

Reverse Transfer Capacitance

75

Thermal Characteristics

Symbol

Parameter

Ratings

Unit

Thermal Resistance Junction to Case

0.10

°C/W

Thermal Resistance Junction to Heat Sink

0.27

T

JSTG

Storage Temperature

-55 to 150

°C

P

D

Maximum Power Dissipation @ T

1180

W

P

DC

Total Power Dissipation @ T

3100

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Figure 1, DRF1202 Simplified Circuit Diagram

The Simplified DRF1202 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), their contribution to

the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal

gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the Anti-

Ring Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. The IN pin is the input for the

control signal and is applied to a Schmitt Trigger. Both the FN and IN pins are referenced to Kelvin ground (SG.) The signal is then applied to

the intermediate drivers and level shifters; this section contains proprietary circuitry designed specifically for the ring abatement. The power

drivers provide high current to the gate of the MOSFETS.