BAS85 datasheet(1/1 Pages) RECTRON

Numer części	BAS85

Szczegółowy opis	SCHOTTKY DIODES

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Producent	RECTRON [Rectron Semiconductor]

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

BAS85

MAXIMUM RATINGES ( @ TA = 25

oC unless otherwise noted )

SCHOTTKY DIODES

FEATURES

* Fast Switching Device(TRR<4.0nS)

* Mini MELF Glass Case (SOD-80)

*

Through-Hole Device Type Mounting

Hermetically Sealed Glass

Compression Bonded Construction

All external surfaces are corrosion resistant and leads

are readily solderable

Dimensions in inches and (millimeters)

RATINGS

Maximum Forward Comtinuous Current @ TA=25

OC

Maximum Forward Comtinuous Reverse Voltage

Surge Forward Current @ tp<1s,TA=25

OC

Maximum Power Dissipation @ TA=65

OC

Storage Temperature Range

Junction Temperature

SYMBOL

BAS85

mAmps

V

200

30

Maximum Peak Forward Current @ TA=25

OC

mAmps

300

600

200

125

-65 to + 150

mAmps

mW

OC

UNITS

IF

VR

IFM

IFSM

PD

TSTG

SOD-80

2006-3

ELECTRICAL CHARACTERISTICS ( @ TA = 25

oC unless otherwise noted )

Reverse voltage leakage current (VR=25V)

Forward voltage Pulse Tesx tp<300

µs,δ<2% (IF=10mA)

(IF=1mA)

(IF=0.1mA)

(IF=30mA)

(IF=100mA)

Diode capacitance (VR=1,f=1MHz)

Reveres recovery time (IF=IR=10mA,IR=1mA)

CHARACTERISTICS

SYMBOL

UNITS

-

2

0.24

0.4

0.32

-

0.8

-

0.5

-

10

5

µA

V

pF

nS

Reverse breakdown voltage (IR=10µA)

V(BR)R

IR

VF

CD

trr

MAX.

-

TYP.

30

-

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

.016(0.40)

.008(0.20)

.142(3.6)

.134(3.4)

TJ

Podobny numer części - BAS85

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NXP Semiconductors	BAS85	25Kb / 5P	Schottky barrier diode 1996 Oct 01
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