HFP830 datasheet(3/8 Pages) SEMIHOW

3 / 8 page

◎ SEMIHOW REV.A0,June 2005

※ Note :

1. VDS=40V

2. 250㎲ Pulse Test

150℃

25℃

-55℃

101

100

10-1 2

GS, Gate-Source Voltage [V]

DS, Drain-Source Voltage [V]

101

100

10-1

100

101

※ Note :

1. 250㎲ Pulse Test

2. TC=25℃

Top:

15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

Bottem

5.0V

SD, Source-Drain Voltage [V]

※ Note :

1. VGS=0V

2. 250㎲ Pulse Test

150℃

25℃

0.2

0.4

0.6

0.8

1.0

1.2

1.4

101

100

10-1

D, Drain Current [A]

GS=20V

GS=10V

※ Note : T

J=25℃

Typical Characteristics

-1

200

400

600

800

1000

1200

1400

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS = 250V

DS = 100V

DS = 400V

∗ Note : I

D = 4.5A

G, Total Gate Charge [nC]

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