HFS2N65 datasheet(3/7 Pages) SEMIHOW

3 / 7 page

◎ SEMIHOW REV.A0,July 2007

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Typical Characteristics

-1

100

150

200

250

300

350

400

450

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

* Note : T

J = 25

GS = 20V

GS = 10V

D , Drain Current [A]

DS = 325V

DS = 130V

DS = 520V

* Note : I

D = 1.8 A

G, Total Gate Charge [nC]

-1

-2

-1

* Note :

1. 250μ s Pulse Test

2. T

C = 25

Top :

15 V

10 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

DS , Drain-Source Voltage [V]

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