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HFS630 Arkusz danych(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS630 Arkusz danych(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,July 2005 Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics 10 -1 10 0 10 1 0 100 200 300 400 500 600 700 800 900 1000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 3 6 9 12 15 18 21 24 0 2 4 6 8 10 12 V DS = 100V V DS = 40V V DS = 160V ※ Note : I D = 9A Q G, Total Gate Charge [nC] |
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