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HFS644 Arkusz danych(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS644 Arkusz danych(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,Dec 2005 Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics 10 -1 10 0 10 1 0 300 600 900 1200 1500 1800 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 V DS = 125V V DS = 50V V DS = 200V ※ Note : I D = 14 A Q G, Total Gate Charge [nC] |
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