HFS830 datasheet(4/7 Pages) SEMIHOW

4 / 7 page

◎ SEMIHOW REV.A0,Dec 2005

J, Junction Temperature [

oC]

1.2

1.1

1.0

0.9

0.8

※ Note :

1. VGS=0V

2. ID=250㎂

- 100

- 50

100

150

200

Typical Characteristics (continued)

100

125

150

C, Case Temperature [

℃]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 11. Transient Thermal Response Curve

-100

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Note :

1. V

GS = 10 V

2. I

D = 2.25 A

J, Junction Temperature [

oC]

-5

-4

-3

-2

-1

-2

-1

※ Notes :

1. Zθ JC(t) = 3.31 ℃/W Max.

2. Duty Factor, D=t

1/t2

3. T

JM - TC = PDM * Z

θ JC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

1, Square Wave Pulse Duration [sec]

-2

-1

100 ms

10 ms

1 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

* Notes :

1. T

C = 25

2. T

J = 150

3. Single Pulse

DS, Drain-Source Voltage [V]

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