SSM40T03GS datasheet(4/5 Pages) SSC

Numer części	SSM40T03GS

Szczegółowy opis	N-channel Enhancement-mode Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Producent	SSC [Silicon Standard Corp.]

Strona internetowa	http://www.siliconstandard.com

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Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

100

0.1

100

V DS ,Drain-to-Source Voltage (V)

T C =25

o C

Single Pulse

100us

1ms

10ms

100ms

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty Factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor = 0.5

Single Pulse

036

Q G , Total Gate Charge (nC)

I D =18A

V DS =10V

V DS =15V

V DS =20V

100

1000

V DS ,Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

td(on) tr

td(off) t

VDS

VGS

10%

90%

4.5V

QGS

QGD

Charge

SSM40T03GP,S

9/16/2005 Rev.3.1

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