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SSM85T08GP Arkusz danych(PDF) 2 Page - Silicon Standard Corp.

Numer części SSM85T08GP
Szczegółowy opis  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  5 Pages
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Producent  SSC [Silicon Standard Corp.]
Strona internetowa  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM85T08GP Arkusz danych(HTML) 2 Page - Silicon Standard Corp.

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08/06/2007 Rev.1.00
www.SiliconStandard.com
2
SSM85T08GP
ELECTRICAL CHARACTERISTICS
@TJ=25
oC (unless otherwise specified )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
80
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.09
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=45A
-
-
13
mΩ
VGS=4.5V, ID=25A
-
-
18
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=45A
-
70
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=80V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=64V ,VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=45A
-
63
100
nC
Qgs
Gate-Source Charge
VDS=64V
-
23
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
38
-
nC
td(on)
Turn-on Delay Time
2
VDS=40V
-
30
-
ns
tr
Rise Time
ID=45A
-
100
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
144
-
ns
tf
Fall Time
RD=0.89Ω
-
173
-
ns
Ciss
Input Capacitance
VGS=0V
-
6300
10080
pF
Coss
Output Capacitance
VDS=25V
-
670
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
350
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=45A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
2
IS=20A, VGS=0V
-
47
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
86
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25
oC , V
DD=30V , L=1mH , RG=25Ω , IAS=30A.



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