| Zakładka z wyszukiwarką danych komponentów |
|
SSM95T06GS Arkusz danych(PDF) 4 Page - Silicon Standard Corp. |
|
|
|||||||||||||||||||||||||||||
SSM95T06GS Arkusz danych(HTML) 4 Page - Silicon Standard Corp. |
|
4 / 5 page ![]() www.SiliconStandard.com 4 of 5 SSM95T06GP,S 2/16/2005 Rev.1.10 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 0 2 4 6 8 10 12 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) V DS =30 V V DS =38 V V DS =48 V I D =45 A Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 131721 2529 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 1 10 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 26 52 78 104 130 02 46 V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =5V |
|
|
Link URL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Link do karty katalogowej | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |