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SSM4409GEM Arkusz danych(PDF) 4 Page - Silicon Standard Corp. |
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SSM4409GEM Arkusz danych(HTML) 4 Page - Silicon Standard Corp. |
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4 / 5 page ![]() 08/04/2007 Rev.1.00 www.SiliconStandard.com 4 SSM4409GEM Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG -4.5V QGS QGD QG Charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125 oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 20 40 60 012345 -V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =-5V 0 4 8 12 16 0 30 60 90 120 Q G , Total Gate Charge (nC) I D = - 14A V DS = - 30 V 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 1ms 10ms 100ms 1s DC 100 1000 10000 1 5 9 131721 2529 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss |
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